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Conference

Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, (The 189th Electrochemical Society Conference)

Country

USA

Date

1996

Research Title

The enhanced degradation of MOSFETs damaged by hot holes

Authors

I. S. Al-Kofahi, J. F. Zhang and G. Groeseneken

Nature of contribution

presenting a paper

Attachments

Created at 3/14/2013 12:32 AM by Dr. Idrees Solaiman Al-Kofahi
Last modified at 3/14/2013 12:32 AM by Dr. Idrees Solaiman Al-Kofahi